| 谭云飞,王伟.高功率1 550 nm多结VCSEL的设计与仿真[J].光电子激光,2024,35(5):475~482 |
| 高功率1 550 nm多结VCSEL的设计与仿真 |
| Design and simulation of high power 1 550 nm multi-junction VCSEL |
| 投稿时间：2022-10-08 修订日期：2022-12-20 |
| DOI： |
| 中文关键词: 垂直腔面发射激光器(VCSEL) 多结 激光雷达(Lidar) 1 550 nm |
| 英文关键词:vertical cavity surface emitting laser (VCSEL) multi-junction laser radar (Lidar) 1 550 nm |
| 基金项目:南京信息工程大学滨江学院人才启动科研项目(2019r005, 550219005)和江南大学横向项目(2021320205000041)资助项目 |
|
| 摘要点击次数: 163 |
| 全文下载次数: 6 |
| 中文摘要: |
| 在激光雷达应用场景下,高功率垂直腔面发射激光器(vertical cavity surface emitting laser,VCSEL)越来越受到关注。而在长波波段,1 550 nm器件一直存在输出功率不够理想,功率转化效率低等问题。目前,多结VCSEL是获得高功率、高功率转换效率 (power con- version efficiency,PCE) 、高光功率密度、高斜率效率 (slope efficiency,SE) 的关键技术。本文将1 550 nm VCSEL与多结技术结合,旨在设计出高功率的1 550 nm器件,最终成功设计并仿真了不同直径 (15 μm、20 μm、30 μm、50 μm、100 μm) 多结 (1—4结) 1 550 nm的VCSEL器件。通过对比不同参数器 件的输出功率,发现器件的输出功率随结数和直径的增加而增大,最大功率能达到2 217 mW(4结100 μm VCSEL)。并且仿真结果表明30 μm VCSEL的输出特性相对较好:单结结构的SE优于50 μm和 100 μm器件,为0.39 W/A；在多结结构中,30 μm优于15 μm和20 μm的器件,分别为0.89 W/A (2结)、1.55 W/A (3结)、1.79 W/A (4结)。最后研究分析了30 μm VCSEL PCE和远场分布,发现SE随结数增加而显著增加,最高为3结的40.4%,驱动电流只有1 A,这是单结PCE的6.2倍；3结的输出功率也高达 1 549 mW,而光束发散角单多结器件之间几乎没有差别,约为5°。以上结果为 1 550 nm VCSEL作为激光雷达系统和3D传感的光源应用提供了很好的器件研究基础。 |
| 英文摘要: |
| In the laser radar (Lidar) application scenarios,high power vertical cavity surface emitting laser (VCSEL) attractes more and more attention.However,in the long wavelength band,such as 1 550 nm lasers,there are problems such as unsatisfactory output power and low power conversion efficiency.At present,multi-junction VCSEL is the key technology to obtain high power,high power conversion efficiency (PCE),high optical power density and high slope efficiency (SE).This paper combines 1 550 nm VCSEL and multi-junction technology,which aims to design a high power 1 550 nm device.Finally,1 550 nm multi-junction (1—4) VCSEL devices with different diameters (15 μm,20 μm,30 μm,50 μm,100 μm) are successfully designed and simulated.By comparing the output power of devices with different parameters,it is found that the output power of devices increases with the junctions and diameter,and the maximum power can reach 2 217 mW(4 juctions,100 μm,VCSEL).And the results show that the output characteristics of 30 μm VCSEL are relatively good:the SE of single junction structure is better than that of 50 μm and 100 μm,is 0.39 W/A,the SE of multi-junction structure is better than those of 15 μm and 20 μm,is 0.89 W/A,is 1.55 W/A and 1.79 W/A respectively.Finally,the PCE and far field distribution of 30 μm VCSEL are analyzed,the paper found that PCE significantly increases with the increase of junctions,up to 40.4% of three junctions,only 1 A driving current,this is 6.2 times the PCE of single junction device.The power output of three junctions VCSEL is up to 1 549 mW,and there is almost no difference in beam divergence between single junction and multi-junction devices,is about 5°.These results provide a good device research basis for the application of 1 550 nm VCSEL as Lidar system and 3D sensing. |
| 查看全文 下载PDF阅读器 |
| 关闭 |
|
|
|
|
|