Fe和Cu对硅材料响应特性影响的对比分析
Comparison of the Effects of Fe and Cu Impurities on the Response Characteristics of Silicon
投稿时间:2022-11-16  修订日期:2023-03-03
DOI:
中文关键词:  Cu杂质  Fe杂质  硅半导体  第一性原理  光电响应
英文关键词:Cu impurity  Fe impurity  Si semiconductor  first principles  photoelectric response
基金项目:
作者单位邮编
吕彤 四川大学电子信息学院 610065
张蓉竹* 四川大学电子信息学院 610065
摘要点击次数: 181
全文下载次数: 0
中文摘要:
      针对硅中容易混入Fe杂质和Cu杂质的问题,根据第一性原理和光电响应理论,建立了两种杂质混入下的硅模型,比较了不同间隙位置的杂质原子对硅材料的能级结构及响应特性的影响。结果表明:两种杂质的混入均会导致硅材料能级结构发生变化,从而硅材料能够出现带外响应,且使得光敏单元的饱和阈值降低。具体而言,Fe杂质在四面体间隙位时,硅材料能级结构会受到明显影响,其带隙减小至0.013eV,从而在约1560 nm处出现带外吸收峰。Cu杂质则是在六边形间隙位时对硅材料的影响明显,使材料带隙消失,且在约1700 nm处出现带外吸收峰。这两种情况下硅基光敏单元的饱和阈值下降也最为明显,当1550nm 激光辐照,饱和阈值分别为0.00165 W?cm-2和0.00254 W?cm-2。分析结果可为光电器件的应用和研制提供参考。
英文摘要:
      Considering that Si-based materials are easily mixed with Fe impurities and Cu impurities during the fabrication process, we establish Si models with two different impurities according to the first-principles and photoelectric response theory. The effects of impurity atoms at different interstitial sites on the band structure and response characteristics of Si are further compared. Results show that the mixing of the two impurities can lead to changes in the energy band structure of the silicon material, resulting in an out-of-band response and a decrease in the saturation threshold of the photosensitive unit. Specifically, when the Fe impurity occupies the tetrahedral interstitial site, the energy band structure of silicon is significantly affected, and its band gap is reduced to 0.013eV, resulting in an out-of-band absorption peak at about 1560 nm. The Cu impurity has an obvious effect on silicon material at the hexagonal interstitial site, so that the band gap disappears, and an out-of-band absorption peak appears at about 1700 nm. In these two cases, the saturation threshold of the silicon-based photosensitive unit also decreases most significantly. When irradiated by a 1550 nm laser, the saturation thresholds are 0.00165 W?cm-2 and 0.00254 W?cm-2, respectively. The analysis results provide reference for the application and development of optoelectronic devices.
    下载PDF阅读器
关闭

版权所有:《光电子·激光》编辑部  津ICP备12008651号-1
主管单位:天津市教育委员会 主办单位:天津理工大学 地址:中国天津市西青区宾水西道391号
技术支持:北京勤云科技发展有限公司