The structure of ZnS.Mn thin films, which are fabricated by MOCVD, is cubic phase that the main peak is (111). Mn distribution is uniform. The relation between Mn doped-concentration and experimental parameters is researched. The device of ZDS:Mn ACTFEL of double-insulating strcture is prepared. Its brightness is higher than 1000cd / m2and efficiency is near 1.48lm / w.