in this paper, we studied the accelerating action of SiO2 and Zns respectively. We also investigated the luminacnce and the transferred charge of the TFEL devices with these two materials as accelerating layers. The experimental result indicates that SiO2 layer's accelerating action on the hot electrons is abviously greaterthan ZnS's. The brightness of the device with SiO2 as accelerating layer is much higher than that of the ZnS-accelerating-layer device.