This paper presents the work inclu dintg the material and circuit design,the process ot realizing long-wavelength ph otoreceiver by monolithically integrated InGaAs metal-semiconductor-metal (MSM ) photodetector and InAlAs-InGaAs High Electron Mobility Transistor (HEMT).The process compatibility for integrating the two kinds of devices has been done a lmost well and the sample with transmitting rate of 1.3 Gb/s has been obtained.