电沉积法制备SnS薄膜
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TM914.4 O484.1

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国家自然科学基金资助项目 (5 0 172 0 61)


SnS Thin Films Prepared by Electrodeposition
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    摘要:

    采用了电沉积在SnO2透明导电玻璃上制备了硫化锡(SnS)薄膜,并对用电化学法实现Sn和S共沉积的条件参数进行了理论探讨,实验中,利用SnCl2和Na2S2O3的混合水溶液作为电沉积液制备了均匀的SnS薄膜,对实验参数进行了优化,对薄膜进行了X-射线衍射(XRD),扫描电子显微(SEM)测量及光学测试,。实验发现,制备的薄膜为多晶的斜方晶系结构,晶粒大小约为150nm,直接光学带隙在1.36-1.73eV之间可调。

    Abstract:

    SnS thin films on tin oxide transparent conducting glass substrates were prepared by electrodeposition method from aqueous solution containing SnCl 2 and Na 2S 2O 3.The mechanism of electrochemical co deposition of tin and sulphur was explored,and the influence of fabrication condition(such as the concentration ratio of SnCl 2 and Na 2S 2O 3,pH value and electric current density) on the structural and optical properties of the films was also studied.The samples were characterized with XRD,SEM and optical measurements.The as deposited films are of polycrystalline with orthorhombic crystalline structure and grain size of about 150 nm.The optical direct band of 1.36-1.73 eV can be adjusted by changing the deposition parameters.

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杜金会 郭淑华 等.电沉积法制备SnS薄膜[J].光电子激光,2002,(9):889~892

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  • 最后修改日期:2002-03-11
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