A series of silicom-based film samples were fabricated at different silane concentration (SC) and the constant by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).The results of materials measurement showed that deposition rate of films prepared by VHF-PECVD was increased largely compared with RF-PECVD.The larger silane concentration means the higher deposition rate.The crystalline volume fraction (X_c) calculated from Raman measurement decreased with the increase of SC.The grain size of sample through the analysis of XRD varied between 20 nm and 30 nm.The transition zone may be occurred at SC=6% and 8% through the analysis of AFM and Raman.The outcome of activation energy indicated that nearly intrinsic microcrystalline material might be fabricated.