A method of controlling growth the VCSEL material by MOCVD with the in-situ optical monitoring were presented.Based on the growth of GaAs/AlGaAs DBR structure,it was found that the result between the in-situ monitoring and factual reflection has 2% mismatch.To modify the parameter of the in-situ monitoring,the real-time in-situ control could be achieved,and the effect what were due to the drift of the system could be reduced.The high quality material has been grown with few runs when the method has been used in a run for growing a VCSEL structure.The VCSEL with good performance can be processed,10.1 mW PW and 7.1 mW CW output power achieved at room temperature.