A novel thin film electroluminescence(TFEL) device using ZnSe as light emitting layer and SiO_2 as electron accelerating layer was fabricated by electron-beam evaporation.When the device excited by a sinusoidal voltage with frequency at 2 000 Hz,two peaks (466 nm and 560 nm) were observed.The photoluminescence(PL),photoluminescence excitation(PLE) spectra,EL and the dependence of EL intensity on appolied voltage and frequency were investigated.The luminescence of ZnSe thin film is attributed to the edge emission and recombination of electrons in conduction band with the holes trapped in the native defective centers.Here,the electrons are accelerated in SiO_2 instead of in ZnSe,the luminescence of which is named cathodoluminescent-like emission.