A method to fabricate a low-temperature phase transition films material VO2 is described. Firstly, Si3 N, and VOx thin films are deposited onto the glass substrate. Then the samples are annealed in reducing atmosphere. Finally nanometer-sized VO2 grains are prepared. The four-point-test shows that the phase transition temeprature of the films material shifts towards room temperature. The transmittance measurements at different temperature also reveal that the material owns good response to switching the infrared light before and after phase transition. The material is expected to obtain good applications on smart windows, opto-electronic conversion, and so on.