The samples with Au/(Si/SiO_2)/p-Si structures were fabricated using the R.F magnetron sputtering technique.And their carrier transport and electroluminescence mechanism were studied by the I-V curve and EL spectra.Using the configuration coordinate as a theoretical model,the results indicate that there are two defect center in SiO_2 films,the electron in Au and the hole in p-Si enter into SiO_2 film with the Fowler-Nordheim(F-N) tunneling model at a high bias voltage and recombine through these defect centers in SiO_2 film.