Al0.48Ga0.52N/Al0.54Ga0.36N multiple quantum wells(MQWs)structure for deep ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition(MOCVD).Double crystal X-ray diffraction(DCXRD),atomic-force microscopy(AFM)and cathodoluminescence(CL)are used to characterize the structural and optical properties of MQWs,respectively.DCXRD shows that the multiple satellite peaks to 2nd order.The DCXRD simulation shows that the well and barrier thickness of MQWs are 2.1 nm and 9.4 nm,the Al co...