Molybdenum-doped indium oxide(IMO) thin films are deposited at 350 ℃ with a growth rate varying in the range of 0.01-0.04 nm by the reactive electron beam vapor technique,and the microstructure,optical and electrical properties of the IMO films are investigated in detail.High purity In2O3:MoO3 ceramic targets and oxygen gas are used as source materials.Firstly,a 30 nm-thickness IMO buffer layer is fabricated on glass substrate by electron beam vapor deposition at the low growth rate of 0.01 nm/s...