An approach for low temperature(290 ℃) GaAs/InP wafer bonding based on boric acid treatment is presented.The GaAs/InP wafer bonding among substrate materials under low temperature is realized easily and nontoxicly.From the scanning electron microscope(SEM) image of the cross section of GaAs/InP wafer,it can be seen that no gap and bubble are found along the bonding interface.An In0.53Ga0.47As/InP multiple quantum well(MQW) structure grown on InP is transferred onto GaAs substrate via the bonding...