The thermal/electric-field poling process of fused silica glass is analyzed based on the voltage biasing process of semiconductor PN junctions.Under the thermal/electric-field poling conditions,the distributions of charge carriers and electric fields at the interface between the silica glass and its two electrodes are similar to those in forward and reverse biased PN junctions.By using the model of biased PN junction and considering the effect of electrons during thermal poling,the dynamical equations for c...