InAsSb epilayers with the thickness of 100 μm are grown by the melt epitaxy(ME).The cutoff wavelengths of the materials enter the 8-12 μm range.The measurement results demonstrate that InAsSb epilayers have good single crystal orientation and crystalline quality,and the dislocation densities reach the order of 104 cm-2.Van der Pauw measurements show that the room temperature electron mobilities of InAsSb epilayers are higher than 5×104 cm2/Vs with carrier densities of 1～3×1016 cm-3.High-sensitiv...