ZnS films are deposited on porous Si(PS) substrates by pulsed laser deposition(PLD),and the samples are annealed at 300 ℃,400 ℃ and 500 ℃ in vacuum respectively.The X-ray diffraction(XRD) and scanning electron microscope(SEM) are employed to analyze the effect of annealing on the crystalline structure and surface morphology of ZnS films.The photoluminescence(PL) spectra of ZnS/PS and I-V characteristics of the heterojunctions are also studied.The results show that highly oriented films are prepa...