An InGaAs/GaAs strained quantum-well(QW) is prepared by metal-organic chemical-vapor deposition(MOCVD).During the growth,the surface growth quality and PL spectra of this strained QW are improved obviously by reducing temperature,increasing speed and using strained buffer layer(SBL).The experimental results indicate that the optimized condition and SBL are used to significantly improve the QW performance.A 1 054 nm laser is fabricated with this strained QW,which exhibits good threshold current and slope eff...