Using anti-etching photoresist as a mask,and with lithography producing periodic structure,c-plane(0001) patterned sapphire substrate(PSS) was fabricated by inductively coupled plasma(ICP) dry etching.Then GaN-based LED epitaxial wafers were grown on PSS by metal organic chemical vapor deposition(MOCVD).Ultimately,LED chips were manufactured and tested.The PSS contains a periodically spaced round hole structure,where the holes have a width of 3 μm,a depth of 864 nm,and they are separated from ea...