A U type of Si-LED is designed and manufactured with the 0.35 μm EEPROM double grating standard CMOS technology.The device adopts a P+-N+-P+-P+-P+-N+-P+-P+-P+-N+-P+ comb structure,in which the two outside P+ is a protect ring,and a poly-Si gate between P+ region is designed to adjust the forward bias emitting light.The devices are tested with the Olympus IC microscope,and the I-Vcharacteristics and the spectra of the devices are presented.At room temperature,the LEDs are forward biased.The light...