β-FeSi2 thin films were grown on Si(111) substrates at room temperature by DC-magnetron sputtering Fe-Si mixed targets and post-annealing.The influence of sputtering power,reacting gas pressure,Ar gas flow and deposition time on structural and electrical properties of β-FeSi2 materials were studied and characterized with Raman spectroscopy,Hall and X-ray Diffraction(XRD).A group of optimized sputtering parameters were obtained:when sputtering power is 80 W,reacting gas pressure is 1.3 Pa and Ar ...