A series of BxAl1-xAs alloys with boron composition ranging from 0.4% to 4.4% have been grown on GaAs(001) substrates by low-pressure metalorganic chemical vapor deposition(LP-MOCVD),and triethylboron(TEB) has been used as the boron precursor.The experimental results demonstrate that 580 ℃ is the optimum temperature (Tg) of BAlAs growth;the boron composition of BxAl1-xAs alloys decreases at 550 ℃ and 610 ℃.At the optimum temperature of 580 ℃,the boron incorporation ratio increases with the incre...