The un-doped and Co-doped SiC films were deposited on p-type Si substrates by the rf-magnetron sputtering technique and the method of composite target,and then they were annealed at 1 200 ℃ for 1 h in a vacuum furnace with a pressure better than 1.0×10-4 Pa.The crystal structure,concentration of Co doping,carrier concentration and conductivity type as well as photosensitivity properties of these films were characterized by X-ray diffraction(XRD),energy dispersive X-ray spectroscopy(EDX),Hall eff...