Boron nitride films for SAW devices were deposited on Si(100)wafers by RF magnetron sputtering.The purity and orientation of h-BN in the films was investigated by fourier transform infrared(FTIR)spectroscopy and X-ray diffraction(XRD)spectra.To optimize the RF magnetron sputtering technology,an orthogonal experiment design was used with sputtering time fixed at 2 h,distance from target to substrate of 6 cm,and the working pressure of 0.75 Pa.FTIR spectroscopy and XRD spectra show that high purity and c-axis...