The preparation of poly-Si thin films by Ge-induced crystallization was investigated.The obtained films were characterized by Raman spectroscopy,X-ray diffraction(XRD),atomic force microscope(AFM) and field emission scanning electron microscope(FE-SEM).The results reveal that Ge can induce amorphous Si(a-Si) crystallization at the growth temperature of 800 ℃.The prepared poly-Si films possess(200) orientation with grain size of 53.7 nm.The surface roughness and average surface grain size are 2.3...