Resonant tunneling transmission coefficient Full width at half-maximum(FWHM)curves of GaAs/AlAs/In0.1Ga0.9As material system were computed and used for the design of resonant tunneling diode(RTD).Several RTD epi-layer structures were presented based on the computed results and these structures were grown by molecular beam epitaxy(MBE) method.The charachteristics of the structures were examined by X-ray diffraction.It is shown that the layer thichnesses of the structures are exactly identical to the design d...