A series of μc-SiGe thin films are prepared with Si 2H 6+GeH 4 and SiH 4+GeH 4 as source gases respectively by very-high frequency plasma enhanced chemical vapor deposition(VHF-PECVD) technique.Structure of films is analyzed by micro-Raman spectroscopy and atomic force microscopy(AFM).The experimental results show that the films deposited with Si 2H 6+GeH 4 present a slower Ge incorporation rate in the films than those deposited with SiH 4+GeH 4,and also the structure shows almost no order deter...