This paper investigates nanomask application in gallium nitride epitaxy and device fabrication.The nanodots Ni and SiO2 were obtained by electro-chemical erode and e-beam evaporation.Nanocones were formed on Ni/GaN template using inductively coupled plasma system and the GaN crystal was overgrown on SiO2/GaN template by hydride vapor phase epitaxy(HVPE).It is indicated that SiO2 nanodots can obstruct from dislocations,which will obviously decrease the density of dislocation,and is propitious to ...