In order to research the electrical resistive switching properties of VOx thin films,the thin films were deposited by reactive sputtering on Cu/Ti/SiO2/Si substrates at room temperature and annealed at 450 ℃ for 30 min in vacuum atmosphere.The crystal structure and surface morphology of VOx films were characterized by X-ray diffraction(XRD) and atomic force microscopy(AFM).The electrical property of VOx thin films were tested by Semiconductor Device Analyzer(Agilent B1500A),the conduction mechan...