The material selection,testing and fabrication technology development of high-performance pixelated CdZnTe(CZT) radiation detectors are reported.The size of the wafer is 10 mm×10 mm×2 mm.The specifications of the anode are 4×4 pixels with a 0.6 mm distance between adjacent pixels.The crystals were evaluated by using infrared microscopy and by being fabricated into planar detectors.The selected crystal has a high resistivity(1010 Ω·cm),high electron transport product(μτe≈1.07±0.02×10-3cm2/V) as w...