The influence of MoO3 doping concentration on the microstructure,optical and electrical properties of In2O3:MoO3(IMO) thin films deposited by the reactive electron beam vapor technique is investigated in detail.High purity In2O3:MoO3 ceramic targets and oxygen gas are used as source materials.With the increase of MoO3 doping concentration,the resistivity of IMO thin films decreases until 1.0 wt.% but then increases from 2.0 wt.% to 10 wt.%,and the optical transmittance shows a downward tendency....