ZnO-doped indium tin oxide(ZnO:ITO) and undoped ITO thin films were deposited on the ultrasonically cleaned K8 glass substrates by the electron-beam evaporation technique.The effect of annealing temperature on the microstructure of ZnO-ITO thin films was investigated.The electrical and optical properties of ZnO-ITO and undoped ITO thin films have been contrastively analyzed.It is found that ZnO-ITO thin films show larger grain size and the crystalline structures become better;At the same time,the surface roughness gets lower with increasing annealing temperature.Further,the electrical and optical properties of ZnO-ITO thin films are remarkably improved.ZnO-ITO thin films annealed at 500 ℃ reveal the best comprehensive properties,including a root mean square roughness of 32.52 nm,a resistivity of 1.43×10-4 Ω·cm and a transmittance of 98.37 % at 442 nm.Compared with undoped ITO films,the ZnO-ITO films show remarkable erosion-resisting ability to PEDOT:PSS.