Light trapping effect is formed when the textured ZnO:B-TCO thin films deposited by MOCVD technique are used in Si-based thin film solar cells,which is important for improving the short-circuit current and the stability of thin film solar cells.In this paper,In2O3:W(IWO) thin films deposited by electron beam evaporation were grown between the glass substrates and ZnO:B thin films as buffer layers,which can promote the growth of ZnO:B thin films.And the scattering characteristics of ZnO:B thin films are improved effectively.When the thickness of IWO thin film is 20 nm,bi-layer IWO/ZnO:B thin films with the resistivity of 2.07×10-3 Ω·cm,mobility of ～20.9 cm2·V-1·s-1 and carrier concentration of 1.44×1020 cm-3 are obtained.Meanwhile,these bi-layer thin films present high transparencies over 85%,and the haze of these thin films increases by about 9.5% at 500 nm wavelength and about 4.5% at 800 nm wavelength.