Amorphous HgCdTe(a-HgCdTe) thin films were prepared by radio frequency(RF) sputtered technique on the quartz substrate.The steady state photoconductivity measurements were carried out on as-deposited and thermal annealed a-HgCdTe thin films.Temperature dependence of photoconductivity shows that the photoconductivity is through a thermally activated process in 80-300 K.The effects of annealing on the steady state photoconductivity and the activation energy are studied.An amorphous-crystalline transformation is induced by thermal annealing.The crystallized fraction of a-HgCdTe thin films increases with annealing temperature and annealing time,resulting in increasing steady state photoconductivity and decreasing thermal activation energy of photoconductivity.The experimental results are discussed on the basis of amorphous-crystalline transformation.