We designed and fabricated the InP-based heterojunction bipolar transistor(HBT) for optoelectronic integrated circuit(OEIC).Both metal organic chemical vapor deposition(MOCVD) and molecular beam epitax(MBE) growth methods were developed.We compared and analyzed HBTs direct current(DC) and high frequency parameters by two growth mechanism types under the same epitaxial structure and technique process.The HBT by MOCVD growth exhibits a current gain of 30 and a cut-off frequency of 38 GHz.The HBT by MBE growth has a current gain of 100 and a cut-off frequency of 40 GHz.Based on testing results,the MBE growth epitaxy layer has better quality and in the same lithography condition,the corresponding HBT device has better performance.