W-doped ZnO(ZnO:W,WZO) thin films for thin film solar cells were deposited by pulsed DC reactive magnetron sputtering.The microstructure,surface morphology,optical and electrical properties of WZO thin films were investigated at different oxygen flow rates.The experimental results indicate that a proper oxygen flow rate is the key factor for fabricating high-quality WZO thin films.The WZO thin films obtained under various oxygen flow rates exhibit hexagonal wurtzite structure with(002) preferential crystalline growth orientation.The surface morphology of WZO thin films is significantly influenced by oxygen flow rate.The WZO thin film prepared at the oxygen flow rate of 2.08×10-7 m3/s(namely 12.5 sccm) presents good optical and electrical properties with an average transmittance of 84.5% in the wavelength range from 400 nm to 1 500 nm,a low resistivity of 3.67×10-3 Ω·cm and a high Hall mobility of 20.5 cm2 v-1s-1.The XPS results reveal that Zn and W elements of WZO thin films exist in the form of oxide state,and the valance state of W element is W6+.