The non-vacuum printing technology is studied for the fabrication of CuInSe2(CISe) thin film solar cell.CISe precursor powder,synthesized by the mechanochemical method,is dispersed by ethyl-cellulose to prepare screen-printing paste.The CISe paste is deposited on substrate by the screen-printing technology to form the CISe absorber layer.The printed CISe absorber layers are annealed in N2 ambience by rapid thermal annealing process at various conditions and characterized by XRD,UV,SEM and J-V.It is found that:CISe precursor powder with preferred(112) orientation can be obtained by the mechanochemical method;Screen-printed CISe absorber layer contains lots of organic dispersion agent ethyl-cellulose;High-temperature annealing process can remove most of the ethyl-cellulose and effectively improve the crystallinity of CISe,whereas overlong annealing also introduces defects to the CISe;The short-circuit current density,open-circuit voltage,fill factor and conversion efficiency of a typical CISe solar cell are 4.48 mA/cm2,355 mV,0.41 and 0.65%,respectively.