In order to find suitable etching cond itions for CdTe thin films in industrial production,different dry etching condit ions are applied to CdTe solar cells in this paper.The performance parameters of J-V,C-V and spectral response are studied.It is indic ated that the time and the power of plasma etching are too small to completely r emove the oxide layer.On the contrary,the surface is damaged too seriously and t he device′s performance decreases.Estimated by the I-V characteristics,C-V characteristics and spectral r esponse of CdTe thin film solar cells,the plasma etching process used in No.B7s ample is suitable for the post treatment of CdTe thin film solar cells.The conve rsion efficiency (10.99%) of CdTe thin film solar cells with complex back contac t layer and post treated by plasma etching is higher than the one (10.26%) by br omine and methanol mixture corrosion.It can be seen that the dry plasma etching used for CdTe thin film solar cells is more suitable for industrial production t han the wet etching.