基于N-BDAVBi的高效率双发光层蓝色OLED
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汪津(1972-),男,吉林东丰县人,博士,副教授,主要 从事有机半导体器件物理研究.

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国家自然科学基金(10804036)、吉林省基础研究计划基金(20100510)和吉林省 自然科学基金(20101512; 201215221)资助项目 (1.吉林师范大学 信息技术学院,功能材料物理与化学教育部重点实验室,吉林 四平 136000; 2.四川大学 电气信息学院,四川 成都 610065)


High-efficiency blue-fluorescence N-BDAVBi-based organic light-emitting dev ice with double emission layers
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    摘要:

    采用蓝色有机荧光染料N-BDAVBi作为客体发光材 料,将其分别掺入主体材料ADN和DPVBi中形成双发光层,制备了结构为ITO/m-MTDATA(40nm)/NPB(10nm)/ADN:N-BDAVBi(15nm)/DPVBi:N-BDAVBi(15nm)/TPBi(30nm)/LiF(0.6nm)/Al的高效率蓝色有机荧光器件(OLED)。器件的最大电流效 率为8.13cd/A,对应色坐标为(0.178,0.302) ,电流密度为18.81mA/cm2,分别是ADN:N-BDAVBi和DPVBi: N-BDAVBi作为发光层的单发光层结构器件的2.4和1.8倍。器件性能 提高主要源于双发光层结构减弱了 载流子在界面处的积累,扩大了激子产生区域以及主体与客体之间有效的能量 转移。当驱动 电压为14V时,双发光层器件的最大亮度为20620cd/m2

    Abstract:

    High-efficiency blue fluorescent organic light emitting devices (OLEDs) with do uble emission layers (DELs) have been demonstrated with structure of ITO/4,4′,4"-T ris (N-3- methylphenyl-N-phenyl-amino) triphenylamine (m-MTDATA)(40nm)/ N,N′-Bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine(NPB)/(10nm)/9,0-Di(naphth-2-yl)anthra cene(ADN):N-(4-((E))-2-(6-((E)-4-(diphenylamino)styryl)nap hthalen -2-yl) vinyl)phenyl)-N-phenylbenzenamine(N-BDAVBi)(15nm)/4,4′-Bis(2,2-diphenyl-ethen -1-yl) biphenyl(DPVBi):N-BDAVBi(15nm)/2,2′,2"-(1,3,5-Benzine triyl)-tris(1-phenyl-1-H-benzimidazole(TPBI)(30nm)/LiF(0.6nm)/Al.N- BDAVBi as blue emitting dopant is doped into ADN host and DPVBi host simultaneou sly to form DELs.The DEL devices show significant improved efficiency compared w ith the conventional devices with a single emitting layer (SEL).The maximum curr ent efficiency of 8.13cd/A with a Commission International deL′Eclairage (CIE) coordinate of (0.178,0.302) at current density of 18.81mA/cm2is obtained in DEL device,which is about 140% and 80% g reater than that of the devices with ADN:N-BDAVBi and DPVBi:N-BDAVBi as emission layer,respectively.The im provement of the current efficiency is attributed to the reduced accumulation of charge carriers at the interfaces,the expansion of the exciton generation region,and the efficient energy transfer from host to dopant.The maximum luminance of 20620cd/m2has been acieved at 14V in DEL device.The CIE chromaticity coordi nate of DEL device changes only from (0.181,0.308) to (0.172,0.292) as the l umin ance increases from 1000cd/m2to 5000cd/m2

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汪津,王福军,张冰,王双,常喜,丁桂英,姜文龙.基于N-BDAVBi的高效率双发光层蓝色OLED[J].光电子激光,2013,(3):445~450

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  • 收稿日期:2012-09-16
  • 最后修改日期:2012-11-30
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