In this paper,a typical green organic light-emitting device (OLED) was fabricated by using the common evaporate plating method on the interface layer in order to enhance the luminous efficiency and improve the I-V-L characteristics o f OLED.The device structure is ITO/NPB(40nm)/Alq₃(30nm):C545T(3%)/Alq₃(20nm)/LiF(1nm)/Al(100nm).Compared with the typical method,it is found that the startup voltage is reduced from 4.5V to 2.5V,and the highest withstand voltag e is improved from 16V to 21V.The maximum brightness of the device is increas ed from 13940cd/m^2to 24630cd/m^2and the luminous efficiency rises to 11.4cd/A from 7.0cd/A.The results show that the common evaporate plating method is in favor of transmission to charge carriers.It can effectively improve the form probability of the excitons.It can enhance the lum inous efficiency and improve the I-V-L characterist ics of OLEDs.