Light trapping technique plays an important role in the high-performance thin f ilm solar cells.In the present study,highly textured ZnO:Al (AZO) films are prepared by medium freq uency impulsed magnetron sputtering and wet etching technology which are influen ced by film thickness and etching time.The high-quality textured AZO surface is formed by wet etching after the films are deposited by magnetron sputtering tec hnology.The effects of film thickness and etching-time on the textured structur e and light-trapping characteristics are investigated.AZO films with different thicknesses are obtained by changing sputtering time,Precise etching time contro l leads to different textured structure with various light trapping properties.T his textured surface morphology leads to a high haze factor which provides high light trapping efficiency.In addition,the electrical propert ies of AZO films are also enhanced with higher carrier concentration and mobilit y as thickness increases.Layers with outstanding electrical (resistivity less th an 3×10－4 Ω·cm),optical (average total transmittance higher than 81% from 400nm to 1100nm),haze (84.3% and 73.8% at 500nm and 750nm respectively) and morphological (RMS higher than 143nm,after a 180s etching process) properties have been obtained,satisfying the demands of photoelectric p roperty of front contact in thin film silicon solar cells and illustrating a goo d potential application in mass production for large area expansibility.