Zn0.86Cd0.11In0.03O alloy semiconductor thin film was deposite d on quartz substrate by pulsed laser deposition (PLD) technique at room temperature .Cd is used to change the optical band gap and In is used to increase the carrier concentration of the ZnO thin film.The X-ray di ffrac tion (XRD) studies confirm that the structure of Zn0.86Cd0.11In0.03O is hexagonal wurtzite wit hout CdO phase,keeping the crystalline structure and lattice parameters close to those of ZnO film.The cold field emission scanning electron microscope shows th at the grain size of Zn0.86Cd0.11In0.03O film is smaller than that of ZnO.XPS measurement is used to prove that In has been doped into ZnO thi n films.These thin films are highly transparent (~85%) in visible region of sola r spectrum.The PL spectra and the band gap of the Zn0.86Cd0.11In 0.03O film show substantial red shift to the visible light region,which can be interpreted in terms of band gap modulation due to Cd doping.Most importantly,t he electrical properties of Zn0.86Cd0.11In0.03O thin film are highly improved with In doping.It has low resistivity (4.42×10－3 Ω·cm) and high carrier concentration (5.50×10¹⁹ cm－3).Both the low elec tric resistivity and large transparent wavelength range enable this film a promi sing candidate for window layer in solar cells and other possible optoelectronic applications.