The SiO_2dielectric films are grown on the structure of InGaAsP-MQW/I nP-buffer layer/InGaAs by plasma enhanced chemical vapor deposition (PECVD).Then,quantum well intermixin g (QWI) is realized by the impurity-free vacancy diffusion (IFVD) technology after rapid thermal annealing (RTA) at N_2atmosphere.The characteristics of RTA for blue-shift of photoluminescence (PL) gain peak wavel ength at different temperatures are experimentally explored.A largest relative blue-shift of 72.8nm is realized with the RTA temperature of 780℃ and RTA time of 80s.It is also found that the blue-shif t of LD region could be controlled within 10nm.A 50nm blue-shift of PL wavelength is obtained,which satisfies th e band energy gap for the electroabsorption modulated DFB laser (EML) device.After formation of holograph ic grating on the laser region and the second epitaxy of P-doped contact layers,the EML device is fabricated by the standardization shallow ridge-waveguide process.The device lasing at 1.5μm with 20mA threshold curre nt and 30dB side mode suppression ratio (SMSR) is obtained.The output power of the EML device is 2mW at an injecting current of 90mA,and the static extinction ratio is 9.5dB when the bias voltage on the modulator is －6V.