Electron trap dopants can obviously improve the photoelectrons decay c haracteristic and thus improve the physical performance of the microcrystal materials.By microwave absorption and dielectri c spectrum measure technique,the decay spectra of the free and shallow-trapped photoelectrons in cubic AgCl microcrystals dope d with different contents of K₄ and (NH₄)₂IrCl_6at 30%Ag are obtained.The results show that as for K₄[Ru(CN )₆] doping,with the doping content increasing,the free photoelectrons decay time gradually increases from 157ns to 520ns,and the free photoelectrons decay time for all the doped samples is longer than that of the undoped samples.But for (NH₄)₂IrCl_6doping,with the dop ing content increasing,the free photoelectrons decay time gradually decreases from 126ns to 45ns,and the free photoelectrons decay time for all the doped samples is shorter than that of the undoped samples.By analysis,the K₄ doping introduces shallow elec tron traps which can trap photoelectrons temporarily, but the (NH₄)₂IrCl_6doping introduces deep electron traps which can trap p hotoelectrons for longer time in AgCl.By analyzing the photoelectrons decay kinetics,it is obtained that the types of dopants have dif ferent effects on decay section of the photoelectrons. Two first-order exponential decay sections occur as for the introduction of sha llow electron traps but one for the deep electron traps.