Aiming at solving the problem of the leakage increasing and the antistatic abili ty decreasing, which is caused by the indium tin oxide (ITO) applied for the red light LED as current spreading layer a nd window layer,the manufacture process of the LED device is studied step by step.T he ITO current spreading layer isn′t harm to the device′s leakage ability or antistati c ability, but the mechanical damage caused by the chip cutting and the short circuit of PN junctio n contamination with ITO particle are the reasons.The mechanical damage during the chip cuttin g and the ITO particle contamination can be avoided by chemically etching the ITO layer in the cutting position and then etching it over the PN junction.Compared with the traditional LED,the n ew type of LED with ITO current spreading layer is prepared in new processes.The light extract ion efficiency increases by about 10%,the antistatic ability increases by about 1.6times and the leakage ability is not affected.