白光LED用Ba0.955Al2Si2-xGexO8∶Eu2+荧光粉的晶体结构和光谱特性研究
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王飞(1985-),男,安徽合肥市人,硕士,讲师,主要从 事稀土发光材料的研究及开发.

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国家自然科学基金(20771086)和安徽三联学院科研(2013Z001)资助项目 (1.安徽三联学院 实验中心,安徽 合肥 230601; 2.温州大学 化学与材料工程学院,浙江 温州 325035)


Crystal Structure and luminescent properties of Ba0.955Al2Si2-xGexO8∶Eu2+ phosphors for white LED
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    摘要:

    采用高温固相法在弱还原气氛下制备了Ba0.955Al2Si2-xGexO8∶E u2+(x=0.0~1.0)系列荧 光粉,研究了Ge4+置换Si4+对其晶体结构和光谱特性的影响。Ge4+以类 质同相替代Ba长石(BaAl2Si2O8) 晶格中的Si4+形成连续固溶体,晶胞参数a、b、c、β和晶胞体积V随Ge4+置换量呈线性递 增。荧光激发谱为宽带,位于230~400nm处,可拟合成4个峰,最大 峰值位于332nm;随着 Ge4+置换量的增加,半高宽(FWHM)从93nm减小到80nm。发射光谱位于375~600nm,可由422nm 和456nm两峰拟合而成,最大峰值位于434nm;随着Ge4+置换量Si4+进入基质晶格,造成 Eu-O距离变小,发光中心Eu2+所处晶体场增强,5d轨道 能级分裂变大,最低发射能级下移,两拟合峰均线性红移。

    Abstract:

    A series of phosphors Ba0.955Al2Si2-xGe xO8∶Eu2+ (x=0.0-1.0) w ere prepared via solid-state reaction in weak reductive atmosphere.The lattice positions and the luminescent mechanism of Eu2+ in the host are discussed.The effe cts of Ge4+-substitution on the host lattice and spectral properties are also i nvestigated. The results show that complete solid solution is formed in the whole range of x =0.0- 1.0while Ge4+ enters BaAl2Si2O8lattice and substitute Si4+ .The lattice para meters (a,b,c,β) and unit cell volume of phosphors Ba 0.955Al2Si2-xGexO 8∶Eu2+ (x=0.0-1.0) increase linearly as Ge4+ content increases in the phosphors.A broad exci tation spectrum consists of four excitation bands,which locate between 230nm and 400nm,and the maximum emission wavelength is at 332nm.The FW HM of the apparent excitation peak is narrowed from 93nm to 80nm.The broad and asymmetri c emission spectrum is between 375nm and 600nm and apparent peak is at 434nm,wh ich can be fitted by two peaks at 422nm and 456nm.The distance between Eu and O is shortened due to Si4+ is replaced by Ge4+.The crystal field of the emitting center Eu2+ is enhanced.The splitting of 5d orbital levels is enhanced and the lowest emission level is expanded to lower region,and two fitted peaks are red shifted.

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王飞,田一光,张乔.白光LED用Ba0.955Al2Si2-xGexO8∶Eu2+荧光粉的晶体结构和光谱特性研究[J].光电子激光,2013,(12):2349~2354

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  • 收稿日期:2013-03-07
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