Transparent conductive tin-doped indium oxide (In₂O₃:Sn,ITO) thin f ilms used as anti-reflecting front electrodes in silicon-based thin film solar cells have been prepared by using t he low cost reactive thermal evaporation (RTE) technique at a low growth temperature of ~160℃.The structur al characteristics,optical and electrical properties of the ITO thin films are investigated with changing the Sn doping concentration.It is observed from XRD micro-structural properties tha t these polycrystalline ITO film s change little.Hall mobilities increase continuously from 38cm²/Vs to 47cm²/Vs and then decrease dra matically down to 30.9cm²/Vs for higher Sn-doping concentrations,and the optical band gaps are weakly affected (~4.02eV).The optimized ITO thin film deposited with the 6.0% of Sn-doping mass concentration exhibits a high avera ge transparency (~87%) in the wavelength range of 380-900nm,a low resistivity of 3.74×10－4 Ω cm and a high Hall mobility of 47cm²/Vs. Furthermore,a hydrogenated amorphous silicon and silicon-germanium (a-Si:H/a -SiGe:H) double-junction solar cell fabricated with the optimized ITO front electrodes presents a high convers ion efficiency of 10.51%.