Gd1.6(W1－xSix)O 6:Eu³⁺0.4 phosphors with different doping concentrations of Si4+ were prepared by a conventional high temperature solid-state phase reaction method,the influence of Si⁴⁺ doping on the phosphors lattice structure was analyzed,and the X-ray diffraction (XRD) patte rns,excitation spectra,emission spectra and decay curves of phosphors under different doped concentrations of Si ⁴⁺ were discussed, respectively.The experimental results show that Si⁴⁺ doping changes the st ructure of the matrix,makes the crystal field around the activator Eu³⁺ ions change,which affects the lumi nous efficiency of phosphor,and when Si⁴⁺ doping concentration reaches 0.4mol,the crystal symmetry is the wors t,and the luminous intensity of phosphors reaches the maximum value.According to the emission spectra and decay curves,w e calculate the J-O intensity parameters and nonradiative transition probability of the samples and find that the appropriate amount of Si⁴⁺ doping can suppress nonradiative transition and enhance the luminous intensity.The theoretical calculation results are agreement with the experimental results.