ZnS films have been deposited on Si an d porous Si substrates using pulsed laser depositon (PLD).The influence of subst rates on the structure and luminescent properties of ZnS films is investigated.The X-ray diffractometer (XRD) and scanning electron mi croscopy (SEM) are used to study the different properties of ZnS films deposited on the porous Si substrate and the Si substrate.The XRD results show that ZnS films deposited on the two sub strates both have a crystalline structure of cubic phase and excellent growth trend along β-ZnS(111)direction. There are many pits in ZnS films deposited on porous Si substrate,while the film s deposited on Si substrate are smooth as seen in SEM images.This indicates the difference betwee n the porous Si substrate and the Si substrate.The photoluminescence spectra ar e measured at room temperature. A blue shift of porous Si peak and decreas e of its luminescent intensity occur after ZnS films are deposited.According to the high transmittan ce of ZnS films, the orange-red light of porous Si transmitted from ZnS and the light emitted by ZnS are added together,and an intensive photoluminescence phenomenon of the p orous Si/ZnS nanostructure composites is obtained in the visible region.