Quantum well intermixing (QWI) using sputtered Cu/SiO_2layers is demo nstrated in InP-based heterostructure of InGaAsP multiple quantum wells.The bandgap energy could be m odulated by adjusting the annealing conditions to satisfy the need of bandgaps in different devices.A max imum wavelength shift of 172nm could be realized with an annealing condition of 750℃ and 200s,which is muc h larger than the common impurity free vacancy disordering.In this paper,the QWI technology is used to fabricate the broad area lasers and electro-absorption modulated laser (EML) to explore its feasibility in phot onics integrated circuits.The bandgap blue-shifts of 61nm,81nm and 98nm are realized with the annealing t ime of 80s,120s and 200s at an annealing temperature of 675℃ for the preparation of broad area lasers.The EL wavelength blue shift of the corresponding MQW material after QWI is almost in accordance with that of the P L wavelength.The wavelength bule shifts are 83nm and 23.7nm for EA and DFB regions,respectivel y with annealing time of 120s at 675℃,which induces a relative bandgap detuning of 59.3nm.The outpu t power of the fabricated EML could reach 9.6mW with 100mA injection current of laser at 0V reverse volta ge of EAM.The extinction ration is about 16.4dB with a reverse voltage of －5V for EAM.